AUIRLR2703 mosfet equivalent, power mosfet.
e Charge Vs. Gate-to-Source Voltage
100
TJ = 175°C TJ = 25°C
10
1 VGS = 0V A
0.4 0.8 1.2 1.6 2.0 2.4
VSD , Source-to-Drain Voltage (V)
ID , Drain Current (A)
1000
OPE.
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
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